![]() ![]() Next, diffusion doping regions are used to specify the dopant concentrations in the source and drain region and the region underneath the gate. This is accomplished by defining a region of constant doping that encompasses the entire geometry. To define the space-charge regions in the silicon, first, the background doping concentration of the silicon is set to represent a p-type epitaxial layer with a concentration of 1x10 15 cm -3.A 2 um silicon layer is grown on a thick silicon dioxide (oxide) layer.Notice that the MOSFET is specified as follows:
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